Metal source drain transistor amplifier

Skip to Main Content. A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity. Use of this web site signifies your agreement to the terms and conditions. This paper discusses the implementation of stacked CMOS circuits employing a compact, multigate layout technique, rather than the conventional series connection of individual transistors.

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Content:

• Modulating Thin Film Transistor Characteristics by Texturing the Gate Metal
• Difference between JFET and MOSFET
• Field-effect transistor
• What’s the difference between MOSFET and BJT?
• Metal Oxide Field Effect Transistor: What is RDS(on)?
• Introduction to MOSFET | Enhancement, Depletion, Amplifier, Applications
• Graphene single-transistor amplifier is a first
• We apologize for the inconvenience...
• Transistors
• What are the Differences between BJT and MOSFET?

WATCH RELATED VIDEO: How to Test MOSFET transistor using Multimeter by some easy methods

Modulating Thin Film Transistor Characteristics by Texturing the Gate Metal

Year of fee payment : 4. A power transistor for use in an audio application is laid out to minimize hot spots. Hot spots are created by non-uniform power dissipation or overly concentrated current densities. The source and drain pads are disposed relative to each other to facilitate uniform power dissipation. Interleaving metal fingers and upper metal layers are connected directly to lower metal layers in the absence of vias to improve current density distribution. Technical Field. The disclosure generally relates to the field of power transistors.

Power circuits are generally susceptible to issues related to power dissipation, such as concentrated heat and current densities. Power dissipation, simply put, is the product of current flowing through a device that has some amount of resistance. The dissipation of power in a device over a period of time produces undesirable heat, which may, if in sufficient quantity, cause melting in portions of the device. Melting in semiconductor devices generally leads to operational failure. Current density is a measurement of electric current through an area and can also lead to device malfunction.

For example, when the path for current to flow becomes restricted to an area that is relatively small for the amount of current flowing, the current density increases. A sufficient increase in current density begins to break down the material through which the current is flowing. This breakdown, similar to undesirable amounts of heat, generally leads to device failure.

The following disclosure relates to a transistor with improved heat and current density disbursement. In one embodiment, metal layers associated with a source are interleaved with metal layers associated with a drain. The metal layers of this embodiment are interleaved with fingers of metal. In another embodiment, the metal fingers include a lower metal layer and an upper metal layer, and the upper metal layer is deposited directly on the lower metal layer without the use of a via or inter-metal connector.

In one embodiment, pads for the source and drain are substantially parallel to one another so as to distribute the current density across a long edge of a source pad or a drain pad. Distributing the current density across a long edge of a source pad or a drain pad will increase the non-destructive current capacity of the transistor.

In the drawings, identical reference numbers identify similar elements or acts. The sizes and relative positions of elements in the drawings are not necessarily drawn to scale or in the exact shape of the operating product.

In the following description, certain specific details are set forth in order to provide a thorough understanding of various disclosed embodiments.

However, one skilled in the relevant art will recognize that embodiments may be practiced without one or more of these specific details, or with other methods, components, materials, etc. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. The hot spot locations depend upon the distance of fingers from pads, length of fingers, and placement of pads with respect to fingers.

The zig-zag lines of FIG. For example, as shown in FIG. Transistor layout includes the sources and drains of four transistors. Two n-channel transistors extend from source pad One n-channel transistor is formed between source pad and drain pad Another n-channel transistor is formed between source pad and drain pad Similarly, two p-channel devices extend from source pad One p-channel transistor is formed between source pad and drain pad Another p-channel transistor is formed between source pad and drain pad Furthermore, the area surrounding the source and drain pads represent a metal layer that connects a source or drain of a transistor to a source or drain pad.

The large arrow represents one of the four current paths and illustrates three points in which heat or current density may cause failure.

Pad corner represents a point near the corner of source pad A least resistive path for current to flow from source to drain exists at pad corner During operation of transistor layout , the corners of source pad , such as pad corner , are susceptible to becoming hot spots.

Hot spots are locations where heat or current density increases the temperature of the metal layer at a location that may cause melting and lead to lower performance or inoperability of transistor layout The metal melting in transistor layout is due to the Joule effect.

An increase in current carried by the transistor during non-destructive tests, as will be described in association with FIGS. Pad positioning contributes to non-uniform current distribution and higher specific Joule effect due to local layout topology. At hot spots, the shown metal layer and underlying metals start to melt. The melting metal interrupts the current path, and the current carried by this path becomes more concentrated.

The sequence of metal melting and current becoming more concentrated eventually produces destructive results. Metal finger base illustrates a second potential hot spot. A base of a metal finger is the location at the metal layer from which a finger extends. Current entering metal finger base transitions from a lower current density to a higher current density due to the current constricting and flowing through vias to lower metal layers.

As discussed in association with the Joule effect, an increase in current concentration can create a hot spot at which the metal layer melts.

This cross section represents the junction between interleaved metal fingers of the source metal layer base of the shown upper metal layer in FIG.

Also shown is a lower metal layer below the metal layer shown in FIG. As current flows from the drain metal layer base through vias to lower metal layer , one can more readily recognize the current concentration that occurs that may destroy the metal vias at the regions located where the drain metal layer base and source metal layer base are adjacent to each other. Finger end illustrates a third potential hot spot. This hot spot is due to major current density from the lower metal layer passing through a via to the upper metal layer of FIG.

Shown in FIG. Transistor layout includes source pad , drain pad , drain pad , drain pad , drain pad , and source pad Power transistor layout includes the sources and drains of four transistors.

The four transistors can be coupled as full Complementary Metal Oxide Semiconductor CMOS output drivers, with their drains the n and p channel transistors coupled together to provide a high power output in a manner well known in the art. The power transistor layout can be considered to be used having two legs, a first leg at the p and n channel transistors on one side and a second leg of the other p and n channel transistors on the other side.

In one embodiment, drain metal layer base of the upper metal layer is deposited directly on a lower metal layer , bypassing the use of via structures, at least in the region of the metal finger section Alternatively, in another embodiment the upper drain metal layer base is deposited directly on the lower metal layer for most of the length of the metal finger section The direct connection of drain metal layer base of the shown upper metal layer with lower metal layer serves several functions.

Directly connecting the drain metal layer base to lower metal layer improves heat distribution resulting from power dissipation. Each oxide or silicon layer has a significant inherent thermal resistance. Analogous to current flowing through electrical resistance, thermal resistance impedes the flow of heat from one process layer to another. The separation of the drain metal layer base from lower metal layer by an interlayer dielectric, such as is shown in FIG. Ideally, generated heat will be conducted to the substrate to minimize the likelihood of altering or melting the electrically conductive metal structures.

The disclosed embodiment of FIG. Directly connecting drain metal base layer to lower metal layer reduces current density issues. Metal finger section of lower metal layer extends beneath source metal layer base Not shown is a lower source metal finger portion which also extends beneath drain metal layer base Metal finger section comprises an overlap of drain metal layer base and lower metal layer Base plate section illustrates an overlap of drain metal layer base and lower metal layer in the metal layer from which the metal finger section protrudes.

The overlap of drain metal layer base and lower metal layer at metal finger section and base plate section distributes the current flowing through the finger so as to reduce the current density. In the absence of either the metal finger section or the base plate section , the maximum total current value is significantly reduced.

The following equations explain the function of the power geometry. In one embodiment, the ratio of the length of metal finger section divided by metal finger section is between 1.

The STOG test simulates the floating ground that may occur in car audio applications of a power transistor in one use of an embodiment of transistor layout A floating ground in a car audio application may damage a power transistor by forward biasing a parasitic pn junction inherent in mosfet devices.

In the STOG test, the capacitor C is precharged with a voltage, a switch SW 1 is opened some time thereafter, and the parasitic body-drain pn junction of the n-channel device is forward biased. In one embodiment, the C is charged to The SPU test simulates the charging of a capacitive load, such as speakers with the needed interconnecting wires, followed by the sudden loss of the power supply to transistor layout In such an event, the pn junction of the p-channel device would become forward biased and begin conducting.

The SPU test evaluates the strength of the p-channel device to withstand such undesirable conditions. In one embodiment, a charged capacitive load is simulated by applying In one embodiment transistor layout is a first stage A of an audio amplifier In another embodiment, transistor layout is a last stage Z of an audio amplifier. In yet another embodiment transistor layout is one or more stages between the first and the last stages of an audio amplifier.

A few points are noted regarding the upper metal layers and shown in FIGS. The metal electrical resistance plays a major role. A safe point on the analysis is that the Joule effects increase the metal temperature. The vias between metal metal layer and metal and metal layer are a source of electrical power because the current flowing from source to drain passes through them and concentrates on the finger-end zone. The metal plates around the pads e.

It is desirable to exploit as much of the lower metal layer as possible to use its vantage to better dissipate energy and impose on it the optimal current with respect to the Joule effect. A way to use this vantage is to join, where possible, metal layer with metal layer Several advantages include: metal layer is better capable of dissipating energy, it increases the via number to the maximum full plate , and it reduces the current which pass from metal layer to metal layer through the via at the finger-end.

Difference between JFET and MOSFET

The FET Field Effect Transistor is a three-terminal electronic device used to control the flow of current by the voltage applied to its gate terminal. The three terminals in this device are named drain, source, and gate. In FETs, either holes or electrons are used for the conduction process. FET transistors usually come with high input impedance at low frequencies and display instant operation, high operation, are robust and cheap, and are used in many electrical circuits.

Field-effect transistor

Thank you for visiting nature. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser or turn off compatibility mode in Internet Explorer. In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript. The development of reliable, high performance integrated circuits based on thin film transistors TFTs is of interest for the development of flexible electronic circuits. In this work we illustrate the modulation of TFT transconductance via the texturing of the gate metal created by the addition of a conductive pattern on top of a planar gate. Texturing results in the semiconductor-insulator interface acquiring a non-planar geometry with local variations in the radius of curvature. This influences various TFT parameters such as the subthreshold slope, gate voltage at the onset of conduction, contact resistance and gate capacitance. Specific studies are performed on textures based on periodic striations oriented along different directions.

What’s the difference between MOSFET and BJT?

RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit. The present application claims priority under 35 U. Provisional Patent Application Ser. The present invention relates to microelectronic devices and, more particularly, to high power, high frequency transistor amplifiers.

Metal Oxide Field Effect Transistor: What is RDS(on)?

All things being equal, the lower the R DS on , the better. R DS on , the total resistance in the path from source to drain, is made up of a series of resistances that traverses the path of current flow. R A is the resistance of an area called the accumulation region. Besides these inherent structural contributors to R DS on , imperfect contact between the source and drain metal and even the wiring that connects the die to the leads on the package can also contribute to R DS on. R DS on increases with increasing temperature this is also known as a positive temperature coefficient.

Introduction to MOSFET | Enhancement, Depletion, Amplifier, Applications

Year of fee payment : 4. A power transistor for use in an audio application is laid out to minimize hot spots. Hot spots are created by non-uniform power dissipation or overly concentrated current densities. The source and drain pads are disposed relative to each other to facilitate uniform power dissipation. Interleaving metal fingers and upper metal layers are connected directly to lower metal layers in the absence of vias to improve current density distribution.

Graphene single-transistor amplifier is a first

The voltage of the covered gate determines the electrical conductivity of the device; this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. Atalla and Dawon Kahng at Bell Labs in , and first presented in It is the basic building block of modern electronics, and the most frequently manufactured device in history, with an estimated total of 13 sextillion 1. MOSFET scaling and miniaturization has been driving the rapid exponential growth of electronic semiconductor technology since the s, and enables high-density ICs such as memory chips and microprocessors.

We apologize for the inconvenience...

Both are voltage-controlled field effect transistors FETs mainly used to amplify weak signals, mostly wireless signals. A field effect transistor FET is a type of transistor that alters the electrical behavior of a device using an electric field effect. They are used in electronic circuits from RF technology to switching and power control to amplification. They use electric field to control the electrical conductivity of a channel. Both are mainly used in integrated circuits and are quite similar in operating principles, but they have a slight different composition.

Transistors

An amplifier is an electronics device which raises the strength of a weak signal. In our previous article we discussed how a transistor can function as an amplifier. But just like the BJT, it too needs to be biased around a centrally fixed Q-point. Since the source terminal is common to the input and output terminals, the circuit is called common source amplifier. The circuit is zero biased with an a. The gate is at approximately 0V d. The input signal V in is capacitively coupled to the gate terminal.

What are the Differences between BJT and MOSFET?

The field-effect transistor FET is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs are devices with three terminals: source , gate , and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.