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Proto-pic AMP:BIT class D amplifier for micro:bit with headphone jack
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We've also updated our Privacy Notice. Click here to see what's new. We present a monolithic InP-based photonic integrated circuit PIC consisting of a widely tunable laser master oscillator feeding an array of integrated semiconductor optical amplifiers that are interferometrically combined on-chip in a single-mode waveguide. We also explored hybrid integration of the InP-based laser and amplifier array PIC with a high quality factor silicon nitride microring resonator.
This work demonstrates a new approach toward high power, narrow linewidth sources that can be integrated with on-chip single-mode waveguide platforms for potential applications in nonlinear integrated photonics. Generation of laser radiation with simultaneously high power and good spatial and spectral mode quality is of longstanding interest. Beam combining approaches that offer the possibility to push beyond the capabilities of single laser emitters have been the subject of sustained investigation [ 1 , 2 ].
In coherent beam combining, light from an array of coherent sources oscillating at a common wavelength interferes constructively to form a single beam, usually in the far-field. For good results this requires control of the relative optical path lengths at a deep subwavelength level, which is technically demanding for radiation in the optical domain.
Wavelength combining approaches, in which different array elements provide light at different wavelengths, are also well known.
Provided that the wavelengths are appropriately controlled, power at multiple wavelengths can be combined into a single spatial mode using frequency selective elements such as diffraction gratings. Since power is combined incoherently, this approach has the advantage that fine control of the optical phase is not required; however, it is not suitable for narrow linewidth single frequency applications.
Beam combining research and development has traditionally targeted free-space applications, such as directed energy, free-space optical communications including deep-space communication, and active optical sensing, e.
One notable exception is wavelength-division multiplexed lightwave communications, in which different wavelengths are independently modulated with independent data streams and combined into a single spatial mode for fiber transmission. Developments in integrated photonics have given rise to new demands for high power, narrow linewidth sources that can be integrated with on-chip single-mode waveguide platforms. In addition to high spectral efficiency coherent fiber communications and radio-frequency photonics applications, nonlinear integrated photonic applications are of particular relevance.
Such applications include wavelength conversion, parametric amplification, microresonator frequency combs, and photon pair generation, as well as chip-scale atom traps.
Although such integrated photonics applications generally operate at powers substantially lower than do the free-space applications considered above, nevertheless, the powers required often exceed that available with existing on-chip sources. Microresonator frequency comb generation, in which continuous-wave pumping of a high quality factor microresonator gives rise to formation of combs of optical frequencies spaced by tens to hundreds of gigahertz, offers a prime example. Such combs arise due to nonlinear wave mixing mediated by the optical Kerr effect and are frequently termed Kerr combs [ 3 , 4 ].
Mode-locked laser frequency combs [ 5 ] have had revolutionary impact in optical frequency metrology, spectroscopy and other applications, but are generally too bulky for large scale applications outside the laboratory [ 5 ].
Since their observation more than a dozen years ago [ 6 ], Kerr combs have been the focus of an intense research effort, in large part due to their potential as a compact and widely deployable frequency comb solution. However, Kerr combs have usually been pumped with external cavity lasers or other off-chip sources, often in conjunction with fiber amplifiers, both to achieve the necessary power and to provide the tunability and narrow linewidth necessary for efficient coupling into the resonant mode.
Recently, low noise Kerr comb generation has been achieved by directly coupling a semiconductor gain element to a silicon nitride SiN microring resonator [ 7 — 9 ]; such work represents important progress toward truly compact and portable comb systems. Nevertheless, significantly stronger pump powers are still desirable to realize high power comb states, such as those from normal dispersion microresonators [ 10 , 11 ], that can be advantageous for applications such as radio-frequency photonics [ 12 ] and high-order coherent communications [ 13 , 14 ].
High power, narrow linewidth pump sources are also advantageous for cascaded electro-optic [ 15 , 16 ] or resonant [ 17 ] electro-optic comb generators. Laser sources for integrated photonics include monolithically integrated lasers in III-V materials platforms, heterogeneously or hybrid integrated III-V lasers for silicon photonics, and rare-earth doped silicon photonic waveguide lasers [ 18 ] the latter require optical pumping via an off-chip source and will not be further considered here.
As an example of monolithic integration, arrays of tunable lasers, modulators, power monitors, photodetectors and other elements have been fabricated in indium phosphide to realize transmitter and receiver photonic integrated circuits PICs for coherent wavelength division multiplexed fiber communications [ 19 , 20 ]. Alternatively, silicon photonics seeks to bring the advantages of advanced silicon manufacturing infrastructure to photonics applications, but must rely on III-V materials for on-chip light sources since silicon is an indirect bandgap material.
This can be achieved either by a heterogeneous integration approach, in which arrays of III-V chips are bonded on silicon and then processed at the wafer scale, or by a hybrid integration approach, in which different dies are first processed, then aligned and attached or bonded onto a common substrate [ 21 , 22 ]. Both the monolithic and III-V silicon approaches feature lasers that can tuned throughout the lightwave C band at power levels of at most a few tens of mW, with high sidemode suppression ratios and relatively narrow linewidths ca.
Reference [ 23 ] reported an InP reflective semiconductor optical amplifier R-SOA butt-coupled to a SiN microring resonator chip, achieving a laser linewidth of 13 kHz with 1. Substantial effort has been invested in development of monolithic InP devices capable of simultaneous high power and narrow linewidth performance.
Monolithic master oscillator power amplifier M-MOPA architectures featuring a master laser feeding an amplifier with expanded spatial mode or an amplifier array have yielded diffraction-limited cw output power beyond 1 W into free-space [ 25 ]. More recent works have reconsidered amplifier arrays in integrated photonics for coherent beam combination.
Reference [ 27 ], which represents a much higher level of integration, describes a fully-integrated free-space beam steering chip using hybrid III-V silicon technology.
The chip comprises a tunable laser and preamplifier, which is split and directed through an array of channel amplifiers to feed a element surface grating array. The powers in the channel amplifiers are not specified but are expected to be low enough to avoid gain saturation.
Coherent beam combining is achieved through far-field propagation, with beam steering implemented in one direction via channel-by-channel phase control and in the orthogonal direction via wavelength tuning and grating diffraction. In contrast to these devices which radiate into free-space, Ref. Another work uses a discrete polarization beam splitter to implement a polarization-diversity amplification scheme, in which orthogonally polarized beams first counterpropagate through a single amplifier chip and are then recombined into a single spatial mode [ 29 ].
In this paper we demonstrate a novel monolithic master oscillator — power amplifier utilizing components similar to those available from an InP-based photonic integrated circuit PIC foundry process [ 30 ]. A preliminary report on this work was presented in [ 31 ]. Our PIC comprises a widely tunable laser feeding an array of four semiconductor optical amplifiers which are interferometrically combined on-chip in a single-mode waveguide.
Our PIC architecture falls within the monolithic master oscillator power amplifier M-MOPA category, but with a design optimized for coherent beam combination into a high-confinement-factor single-mode waveguide [ 25 ]. Finally, we explored the functionality of our PIC after hybrid integration with a high quality factor SiN microresonator chip.
Under low drive conditions we are able to demonstrate quasi-continuous tuning and control in the presence of weak reflections from the III-V to SiN interface. Under full current the interferometrically combined SOA array itself lases, in conjunction with an external cavity formed via feedback from the silicon nitride microresonator chip. In this configuration we generate The InP-based photonic integrated circuits PIC are fabricated using a system on chip PIC integration platform that monolithically integrates high gain active sections and low-loss passive waveguides.
The active elements consist of multi-quantum well MQW active regions whereas the passive regions waveguides and MMIs consist of bulk double heterostructures. Conventional growth-etch-regrowth techniques [ 20 ] are used to monolithically integrate the different components of the widely tunable, narrow linewidth master oscillator with an array of SOAs.
Once the wafer fabrication steps are complete, the wafers are subjected to a die fabrication sequence wherein they are singulated into individual die via cleaving and each die is coated with an antireflection coating. The die are subsequently solder die-attached to an AlN carrier, forming a chip-on-carrier CoC.
A custom optoelectronic probe station was built to permit alignment of an output optical fiber, multiple individual DC probes, and a custom high density probe card. Additionally, a home-built high-density driver was used to provide the required PIC control signals. The widely tunable master oscillator used was an experimental variation of a DBR-type commercial laser previously described [ 20 ] and most recently optimized as a foundry offering [ 30 ].
The device featured differentially tuned grating mirrors enabling Vernier tuning over the extended C-band [ 20 ] and quasi-continuous tuning over 5 nm and was integrated with an array of SOAs. InP PICs are typically realized using a high-confinement-factor integration platform to achieve maximum modal gain for lasers and high efficiency for modulators and photodetectors. Thus, the coherent combination of an SOA array approach was implemented to scale the output power beyond the saturation power of individual SOAs in this integration platform.
Two dual SOA variants were fabricated and compared; one variant featured two SOAs with single electrodes of constant transverse mode size, while the second variant consisted of two SOAs with a flared optical mode to adiabatically increase then decrease the transverse mode profile in an attempt to boost the SOA saturation power [ 32 ]. The latter variant is shown in Fig. The architecture featured a mix of two SOA pairs: the variant with constant transverse mode and the single electrode flared transverse mode design.
The relative phase was again controlled by changing each SOA bias current, as previously shown in master oscillator power amplifier literature [ 33 ].
The third iteration integrated thermo-optic phase adjusters with an array of four segmented flared SOAs, shown in Fig. All the designs featured an angled output waveguide with an antireflective coating to suppress reflections from the InP-air interface.
Despite high reflection suppression, small reflections that pass through the SOA array are amplified and fed back into the laser. We now report on the optical power performance of the master oscillator — interferometric power amplifier PICs from the third iteration. Detailed results from the first and second iteration are reported in Supplement 1 , Sections 1 and 2 respectively, as are aspects of our experimental methodology.
Each SOA gain region was segmented into two equal lengths with separate electrodes to improve the spatial control of the carrier density along the length of the SOA device, which simultaneously increases saturation power and reduces noise figure [ 34 ]. In addition, the design included integrated thermo-optic phase adjusters inside the nested Mach-Zehnder interferometer to compensate for phase differences between the arms.
This prevents power lost due to SOA drive variations without phase adjusters, as discussed in Supplement 1 , Section 2. Figure 2 shows the output power for a single SOA others left open measured with an integrating sphere, for different currents to the front and back SOA segments. We attribute this increase to control of current density via sectioning of the gain region. Measured facet power for the third generation PIC vs. Only a single SOA is excited.
The thermo-optic phase adjusters were iteratively adjusted for maximum power output, using the algorithm described in the Supplement 1 , Section 2. After reaching the maximum power, the phase of one of the thermo-optic phase adjusters was swept in order to observe the interference of one SOA against the N-1 SOAs that remain coherently combined. We can understand the power scaling with the number of SOAs excited N as follows.
First, assuming each SOA generates the same output power P o , ideal power combining yields an output power that scales linearly with N , i. We see that the output power scales quadratically with the number of SOAs excited inside the M -arm interferometer. Figure 3 shows the measured output power as the SOA phase is varied.
In the two SOA case, we measured a 20 dB extinction ratio, with a maximum power of For three SOAs, the maximum power with coherent combination reached mW, with an extinction ratio of 9. For four SOAs, the maximum power was mW, and an extinction of 6. These results provide evidence of high-quality control of the coherent combination process with the integrated independent DC phase controls. Note that the variations in maximum powers and extinction over the full range of phase shifts is attributed to mechanical drifting of the lensed fiber relative to the chip during the measurement.
The representative curves with 3a. Table 1 compares the maximum powers obtained vs. This measurement was performed for each of the four SOAs. The average value and standard deviation between 4 SOAs, This number was extrapolated to 2, 3, and 4 SOAs using Eq. Roughly we do see the expected N 2 power scaling. Table 1. We now present data on the tunability, spectral purity, and linewidth of the tunable laser, both with and without high power amplification. The master laser is a custom variation of a commercially available widely tunable sampled grating tunable distributed feedback laser [ 20 ], and we observe similar tuning characteristics shown in Supplement 1 , Fig.
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