L band amplifier module type

Operating frequencies range from 0 to over 60 GHz. Please use the Amplifiers search below to select your product, or call us for availability and pricing at 1 The TGACP is offered in a Cu-base package that can either be bolted down or eutectically attached for superior thermal management. The broadband performance supports both electronic wafers and radar opportunities across defense and commercial markets. The TQP7M contains added features implemented on-chip that differentiates it from other products in the market. The amplifier contains RF overdrive protection allowing the device to be very rugged.

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• L/S-Band 600W Power Amplifier
• RF Power Amplifiers (PAs)
• Power Amplifiers
• US6606337B1 - Multiple band Raman amplifier pump source - Google Patents
• US20040130396A1 - VHF/UHF broadband high power amplifier module - Google Patents
• C Band And L Band Fiber Raman Amplifier Module Benchtop Size
• Investigation of Broadband S-Band to L-Band Erbium-Doped Fiber Amplifier (EDFA) Module

WATCH RELATED VIDEO: TNP #11 - Teardown \u0026 Analysis of a 75-110GHz (W-Band) Waveguide mm-Wave Balanced Mixer Module

L/S-Band 600W Power Amplifier

But the task of developing octave band microwave power amplifiers that are cost competitive has been an elusive goal. It derives its name from the hierarchy of levels employed in its construction, which, ignoring the combining elements, gives the block diagram of the amplifier an appearance not dissimilar to that of a rotated company organizational chart see Figure 1. The usual form of a CSA employs identical unit amplifier designs within each level, or rank, of the hierarchy, but designs may vary from rank to rank.

Typically, a lower power, high gain, unit amplifier a pre-amplifier is employed at the front end of the amplifier system with higher power, lower gain units being employed in the output rank.

All the useful power in a CSA is developed in the output rank, the preceding ranks being used only to develop the required drive levels. The AS, which is available in forced-air or water-cooled versions, follows the CSA philosophy. The final design consists of 32 power modules in parallel, arranged in banks of eight, with each of these banks having its own driver module, the four banks of eight being combined with a very low loss combiner.

The key microwave components of the amplifier system are the output rank power modules and the final combiner that must be capable of handling in excess of 1 kW of CW power, across an octave bandwidth 1 to 2 GHz. Concentrating on the development of a single power module has the virtue that a high percentage of engineering resource, microwave, electrical, mechanical, thermal and reliability can be focused to design an outstanding component around which a system can then be built. Figure 2 shows the module construction.

Power is developed within the module by combining two 20 W balanced pair amplifiers. Using one level of broadband quadrature combiners, plus the use of a robust GaAs FET technology, allows the modules to absorb percent reflected power even when the module is operating at full output power. This can be a significant benefit to the system designer if the amplifier system is required to operate into high VSWR conditions.

With the development of the output rank power module complete, the next stage was to develop a quarter section. This required the parallel combining of eight power modules.

A schematic representation is shown in Figure 3 , along with the results achieved from combining eight modules by this method. Partitioning the final amplifier in this way greatly eases maintenance in the final system. The aim for the new combiner was to reduce losses and improve general manufacturability of the component.

A 3D view of the board layout, showing routing slots, is illustrated in Figure 4. The losses incurred in the existing 1 kW combiner were around 0. This power loss also created a heat problem, which required the use of a large heat sink to ensure effective dissipation, setting a limit on the physical size of the resultant structure.

In investigating an alternative design, the focus was on the causes of losses, which were recognized as substrate-dielectric losses, copper losses in the tracking and connector losses. After some investigation, it was decided that a suspended stripline solution would offer the best trade-off in terms of losses and mechanical dimensions.

Air was the chosen dielectric. Power combining of the four W inputs is implemented using a two-layer cascade of two input resistorless Wilkinson style combiner structures. The resistors are not required in this application because all input signals are assumed to be matched in both phase and amplitude. Because of the high powers involved, each W input connector is an N-type. Figure 5 shows the measured transmission responses of the combiner.

Note the flatness of the amplitude response and the low insertion loss. This new combiner design produced less than half the loss of the existing design and, in tests with a full 1 kW of RF power being produced, the heat dissipation in the component was negligible. The power achieved in the final system is shown in Figure 6 , with a minimum of 1 kW of saturated power achieved across the band MHz to 1.

For a major proportion of this band, this power is of the order of 1. Also of note is the close tracking of the 1 dB compression level to the saturated power level, allowing the amplifier to deliver up to 6 dB more linear power than the TWT equivalent.

The multi-module combining approach in the output rank ensures that there is a low probability that a single random failure will cause the amplifier to cease operating in a satisfactory manner. It is more likely that failure modes will cause a gradual and predictable reduction of power over a period of time until a level is reached at which its performance has degraded below an acceptable threshold.

For the output rank of the amplifier, the loss in microwave power is related to the number of failures by the equation:.

For the AS, which has 32 modules in the output rank, if one module fails the output of the amplifier drops by 0. If one transistor fails the output power drops by only 0.

This ability to defer maintenance to a time when cost is minimal is one of the major benefits of the amplifier when compared to a TWT equivalent. The AS is a unique, octave bandwidth, solid-state microwave power amplifier, competing successfully in technical and cost performance with TWTs for the delivery of 1 kW across the 1 to 2 GHz band.

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RF Power Amplifiers (PAs)

The peak power at the output connector is 12,W. Built-in features such as duty cycle monitor and pulse width monitor ensure trouble free operation. The following is a description of the system elements and their salient features: The APRA pulse amplifier contains the following elements:. The interface panel provides for The Interface panel is connected to each amplifier module via the blind-mate connectors and also to the power supply shelves. The output of the Driver module passes through a splitter and then to the 1 RU Input Splitter panel which is a splitter. One is associated with each RF chassis.

Power Amplifiers

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US6606337B1 - Multiple band Raman amplifier pump source - Google Patents

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US20040130396A1 - VHF/UHF broadband high power amplifier module - Google Patents

But the task of developing octave band microwave power amplifiers that are cost competitive has been an elusive goal. It derives its name from the hierarchy of levels employed in its construction, which, ignoring the combining elements, gives the block diagram of the amplifier an appearance not dissimilar to that of a rotated company organizational chart see Figure 1. The usual form of a CSA employs identical unit amplifier designs within each level, or rank, of the hierarchy, but designs may vary from rank to rank. Typically, a lower power, high gain, unit amplifier a pre-amplifier is employed at the front end of the amplifier system with higher power, lower gain units being employed in the output rank. All the useful power in a CSA is developed in the output rank, the preceding ranks being used only to develop the required drive levels.

C Band And L Band Fiber Raman Amplifier Module Benchtop Size

Effective date : Year of fee payment : 4. Year of fee payment : 8. Year of fee payment : An optical pumping apparatus provides pumping for a Raman amplifier across either the C-band alone, or across both the C-band and the L-band. A first pump unit provides the optical pump energy necessary for a flat gain response in the C-band. A second pump unit, operating as an upgrade module, can be activated to expand the pumping range into the L-band.

Investigation of Broadband S-Band to L-Band Erbium-Doped Fiber Amplifier (EDFA) Module

This chapter presents three sections that describe the broadband S-band to L-band erbium-doped fiber amplifier modules. In the first section, an S-band gain-clamped erbium-doped fiber amplifier EDFA module, employing a fiber Bragg grating FBG to act as a reflected element for generating a saturated tone injected into the EDFA module by using forward optical feedback method, is proposed. Moreover, the output performance of the gain and noise figure NF in the proposed gain-clamped S-band EDFA has been discussed in the wavelength range of — nm. In an operation range of — nm, the entire gain is larger than 35 dB and the observed NF is between 5.

The Raman amplifier is used to amplify optical signal in long distance optical transmission system and dense wavelength division multiplexing optical transmission system. It can amplify optical signal in C or L-band with high gain and low noise. All products have years warranty. After the quality guarantee period began to charge appropriate maintenance service fee.

Start Frequency: MHz. Stop Frequency: MHz. Output Power: Watts. Our remarkable hardware and software architecture is advanced beyond any other amplifier supplier and offers break through capabilities not seen before in EW systems. Among these capabilities are Multi-domain operations where a single unit is capable of operating in Multi-Domain scenarios as a jamming, communications and radar transmitter at optimal performance with any type of modulation.

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