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Views Downloads 35 File size 12MB. Handbook of RF and Microwave Power Amplifiers Whether you are an RF transistor designer, an amplifier designer, or a system designer, this is your one-stop guide to RF and microwave transistor power amplifiers. Covering state-of-the-art developments, and emphasizing practical communications applications, this is your complete professional reference on the subject. He received his Ph. He is a Fellow of the IEE.

Pham, Morgan J. Subject to statutory exception and to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written permission of Cambridge University Press.

First published Printed in the United Kingdom at the University Press, Cambridge A catalog record for this publication is available from the British Library ISBN Hardback The technical descriptions and procedures in this book have been developed with the greatest of care; however, they are provided as is, without warranty of any kind.

The author and publisher of the book make no warranties, expressed or implied, that the equations, programs, and procedures in this book are free of error, or are consistent with any particular standard of merchantability, or will meet your requirements for any particular application.

They should not be relied upon for solving a problem whose incorrect solution could result in injury to a person or loss of property. Cambridge University Press has no responsibility for the persistence or accuracy of URLs for external or third-party internet websites referred to in this publication, and does not guarantee that any content on such websites is, or will remain, accurate or appropriate.

Dragon 2 1. Trew 3. Cripps 4. Myer 6. Bahl 8. RFPA thermal design — basics 9. Wear-out versus defects acceleration versus real life Interconnect vias Copper bump Hiebel That book is of course not just out of print but also largely out of date. This book adopts the same philosophy as the previous one with chapters on device technology, amplifier design, CAD, thermal design, reliability, measurements, and applications — but with a completely different set of authors and with every chapter completely re-written to bring the content up to date.

The political, economic and technical landscape has changed almost beyond recognition in the intervening two decades.

In the s most RF and microwave engineers were working in military electronics, defense spending was largely responsible for all the technical advances, and there were no mobile phones! Compare that with the situation now where there are probably just as many RF and microwave engineers working on commercial applications as there are in military electronics, commercial applications often drive technical advances, and most households will have not just one but several mobile phones — and it is the mobile phone industry that has largely been responsible for this shift toward commercial applications.

However, there is one consequence of this sea-change in the industrial and technical environment which has had a profound knock-on effect when it comes to writing a book such as this.

Now the commercial pressures of shortest possible time to market and minimum cost, etc. I want to publicly acknowledge my deep debt of gratitude to all the authors in this book for making that commitment and hence making this book possible. It includes both theory and practice as well as a variety of different applications. Often overlooked supporting topics such as CAD, thermal design, and reliability are treated in depth.

John Walker has put together an outstanding team of authors, each of whom is well qualified to address his topic. Fritz Raab, Green Mountain Radio Research Company John has successfully brought together, in one book, the current knowledge from world experts actively involved with the characterisation and modelling of devices together with those developing and designing RF and microwave power amplifiers.

The timely publication of this book will serve as a useful reference source for engineers working in both the commercial and military market sectors. The application space includes cellular phone basestation transceiver systems, pulsed radar, ISM industrial, scientific, medical , avionics, digital television broadcast, etc.

This diverse and evolving RF power amplifier landscape dictates the strategy for the design, fabrication, and optimization of multiple generations of RF power devices. The RF power transistor must satisfy a broad and often conflicting set of application requirements, including but not limited to power, linearity, efficiency, gain, reliability, thermal management, bandwidth, ruggedness, digital predistortion DPD linearizability, and cost effectiveness.

The amplifier architecture has also evolved to adapt to the everchanging system requirements, most recently with the widespread adoption of Doherty amplifiers to boost back-off efficiency in linear applications. These architectural evolutions create opportunities for further refinements in the RF power transistor to extract peak performance from the architecture.

The various major market segments of the RF power market tend to embrace a dominant device technology that meets a broad range of these requirements until a new technology emerges to offer a more compelling solution. Through the late s, silicon bipolar transistors were the preferred RF power device technology [1—2]. The relatively low frequencies and amplifier requirements of the era were compatible with silicon bipolar transistor technology, which was capable of providing a robust, cost-effective solution.

The bipolar transistors had adequate gain and efficiency, could be readily scaled to achieve the desired power levels, and offered linearity that was consistent with the modest requirements of that era. On the other hand, power gain was relatively poor, packages with isolated flanges were expensive, thermal runaway due to the negative temperature coefficient had to be carefully managed usually at the expense of degraded performance because of the need to incorporate ballast resistors , and the evolving and increasingly more stringent linearity and efficiency requirements were becoming difficult to design into the transistors.

The limitations of the silicon bipolar transistor eventually created an opening for a new generation of transistor technology that offered superior performance without 2 Silicon LDMOS and VDMOS transistors these limitations. The early s witnessed the emergence of double diffused MOS DMOS transistors that were superior to silicon bipolar transistors for many highpower RF amplifier applications [3—4].

A range of factors contributed to this improved performance, starting with the improved frequency response inherent to a majority carrier device compared to the minority carrier transport in the bipolar transistor. Second, the DMOS transistor structure lends itself to high breakdown voltage designs without seriously compromising frequency performance, opening up the possibility of increasing the power supply voltage, lowering the power supply cost, and simplifying the design of ever higher power devices.

Another key advantage is that MOSFETs are not susceptible to thermal runaway, due to the positive coefficient of thermal resistance [5]. The ability to design DMOS transistors with high linear efficiency has also emerged as a key factor in their widespread deployment.

These topics will be explored in greater detail later in this chapter. Each of these variants has their strengths and weaknesses, and each has largely succeeded in finding appropriate market segments within which to flourish. The doping profile in the channel region of both transistors is formed through the overlap of lateral diffusion profiles, but LDMOS maintains the drain region and current flow laterally near the surface where it can be easily modified and optimized, making it more attractive where linear efficiency and high-frequency operation are important.

VDMOS, on the other hand, can achieve excellent power density i. This same structure tends to limit the scaling of the gate structure, detracting from the high-frequency performance. This makes it the logical choice for applications that require very high-power density at relatively low frequencies. Comparisons between these two technologies will be explored throughout this chapter.

Figure 1. The drain supply voltage to first order determines the length and doping level in the n-drift region. LDMOS devices optimized for handsets may have an n-drift length of less than 0. The vast majority of cellular infrastructure base stations are designed with a supply voltage of 28—32 V. When the transistor is turned on, the drift region simply acts as a voltage variable resistor and creates a voltage drop such that the potential in the drain region below the gate is significantly less than the applied DC bias in order to preserve the integrity of the gate oxide and ensure that HCI hot carrier injection is limited.

Most LDMOS designs also leverage a technique termed RESURF — REduced SURface Fields [12], which relies upon a rapid two-dimensional expansion in the depletion region width with increasing drain bias that keeps the peak electric field below the critical field for impact ionization, without compromising the low drain bias RDSon of the transistor; this technique enables very high breakdown voltages while maintaining the low RDSon necessary to achieve high-power density.

Unless stated otherwise, references to power 1. The nature of the reactive circuit elements in an RF transistor enables the peak drain voltage to reach approximately twice the drain supply voltage Vdd during class AB operation, and even higher during other modes of operation [13]. The ability to withstand these peak voltages explains why data sheets for transistors designed for 32 V Class AB operation typically specify 65 V minimum for drain-to-source breakdown voltage, BVDSS.

Since this region is the largest parasitic resistance within the transistor, it also determines the saturation current and hence power density. Keeping this resistance as low as possible while maintaining an appropriate breakdown voltage and HCI reliability is a critical part of the design tradeoff made in the LDMOS transistor design process.

The lightly doped p-type epitaxial layer is also important to achieve low drain to source capacitance, Cds , which is important to achieve good high-frequency performance. The gate of the LDMOS transistor is most commonly composed of a stack of polysilicon and a silicide e. The silicide lowers the gate resistance by at least an order of magnitude over that of highly doped polysilicon.

If the gate resistance is too high, the power gain of the device will suffer. The gate length and gate oxide thickness are key in determining the frequency response of the transistor i. Thinner gate oxides and shorter gate lengths result in a higher ft. In addition, a thinner gate oxide results in a higher device transconductance gm , but not necessarily higher RF power gain. This is because the thinner gate oxide also increases the input capacitance of the device which can lower gain.

This is another example where design tradeoffs must be considered. For the LDMOS transistor, this region is created by using the gate to self-align a moderate dose p-type implant referred to as the PHV implant to the source edge of the gate of the transistor. The result is a MOSFET with a nonuniform channel doping profile, with the source side more heavily doped than the drain side. One advantage of this is that the dopant gradient generates its own electric field which provides a small boost to the overall current transport of the device [16].

More importantly, this design allows the large supply voltages described earlier to be applied without suffering punch-through. As the 1. This phenomenon is referred to as punch-through, and results in a loss of control of the drain current by the gate voltage. Since the depletion region width is inversely proportional to the doping density, the growth of the depletion region into the PHV slows considerably as it moves towards the more heavily doped source side of the channel in an LDMOS device see Figure 1.

This preserves the high-voltage capability of the transistor. The body cannot be biased separately from the source. This is done so that the back of the wafer can be used as the grounded source in the application.

Making electrical ground connection to the back of the die obviates the need for source wires to be present to make a top-side connection. By eliminating the topside source bond wires, a large amount of source inductance is eliminated, increasing the gain of the transistor. This metal is not contacted by a bond wire for biasing and simply acts as a means to short the pn junction between the two regions.

The p-epi must not be entirely consumed by the substrate up-diffusion because of the breakdown voltage and capacitance constraints described earlier. The wafer is then thinned through a backgrind process to thicknesses in the 2—6 mils range and back-metal is deposited on the wafer backside so that a good, low-resistance contact can be made between the die and package. There are two components of the device design that are located above the silicon surface: the field plate and the drain metallization.

The field plate provides an extra degree of freedom within the n-drift optimization tradeoff described earlier. By placing a grounded conductor i. In other words, the parasitic drain resistance of the device can be lowered, the RF power density of the device can be increased, and the HCI levels in the device can be reduced if the field plate is designed correctly.

In addition, since this field plate is grounded, it can act as a shield between the drain metals and the gate of the transistor, reducing the feedback capacitance Cgd. This requires a very robust metallization, and is typically satisfied with a thick aluminum or gold top metal with dimensions thickness and linewidth that are appropriate to keep the current density low enough to meet the MTTF goals.

This region is also the primary source of parasitic resistance in the VDMOS device but it extends down towards the backside of the die rather than remaining at the surface.

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For many years, if not decades, power amplifiers were one of the single biggest component disappointments. In fact, they had even more serious compromises than preamplifiers. While there were a lot of "good" amplifiers, few were "excellent" and even fewer were "superb". As for "great", I would have passed on naming even one amplifier until recently. However, there are finally a few amplifiers, auditioned in the last few years, that appear to have earned that accolade. The standards here are higher than others, and this is why you will find only 2 or 3 amplifiers in Class A, not the 50 or more you will find in Stereophile , because "Greatness", even when loosely defined, is never that common in any human endeavor. I would read this section more carefully than any other, because there are more conditions, caveats and warnings than in any other component category. In fact, just the opposite is almost always true. There is very good reason for this The Missing "Megabuck" Amplifiers.

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LOG IN. Has anyone tried this "minimalist" cable kit? After receiving a recommendation from someone with similar musical values to myself, and whose ears I trust, I could not resist ordering one. I will report on how they sound in a few weeks, but am interested in others' opinions too. For those that have not heard about them look at www.

Audio Sector Gainclone integrated amplifier review

When autocomplete results are available use up and down arrows to review and enter to select. Touch device users, explore by touch or with swipe gestures. Log in. Sign up. Collection by Doron Volovic. Last updated 1 hour ago. Similar ideas popular now.

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This is the cheapest Watt amplifier circuit you can make,I think. Enough for you to get rocked? TIP and are complementary Darlington pair transistors which can handle 5 A current and V ,famous for their ruggedness.