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Ultra wideband amplifier schematic

Effective date : Year of fee payment : 4. Year of fee payment : 8. Year of fee payment : Circuitry and methods for improved amplifiers with large bandwidth and constant gain-are provided. The combination of a synthetic inductive drain load and a bridged-T matching network provide amplifiers that can drive a substantial capacitive load with the above mentioned improvements over prior amplifiers.


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An Ultra-Wideband CMOS Low Noise Amplifier for 3–5


For complaints, use another form. Study lib. Upload document Create flashcards. Flashcards Collections. Documents Last activity. Add to Add to collection s Add to saved. The resistive shunt-feedback provides wideband input matching with small noise figure NF degradation by reducing the Q-factor of the narrowband LNA input and flattens the passband gain.

The proposed UWB amplifier is implemented in 0. Measurements show a 3-dB gain bandwidth of 2—4. The allocated frequency band of the UWB system is 3. Two recent major proposals [1], [2] for the IEEE The low-frequency band has been allocated for the development of the first-generation UWB system.

CMOS technology is a satisfactory choice for the implementation of the low band UWB system when considering the time to market, hardware cost, the degree of difficulty, etc.

Until now, reported CMOS-based wideband amplifiers tend to be dominated by two different topologies: the distributed and resistive shunt-feedback amplifiers. The distributed amplifiers [3], [4] normally provide wide bandwidth characteristics but tend to consume large dc current due to the distribution of multiple amplifying stages, which makes them unsuitable for low-power application. The resistive shunt-feedback-based amplifiers [5], [6] provide good wideband matching and flat gain, but tend to suffer from poor noise figure NF and large power dissipation.

In the resistive shunt-feedback amplifier, input resistance is determined by the feedback resistance divided by the loop-gain of the feedback amplifier [7]. Therefore, the feedback resistor tends to be a few hundred ohms in order to match the low signal source resistance of typically 50 , leading to significant NF degradation. Furthermore, even with a moderate amount of voltage gain, the amplifier requires a rather large amount of current, especially in the CMOS, due to its strong Manuscript received April 8, ; revised August 26, Kim, M.

Kang, P. Anh, and S. Digital Object Identifier Narrowband LNA topology. Recently, a new topology of a wideband amfilter at plifier for UWB system, which adopts a bandpass the input of the cascode low noise amplifier LNA for wideband input matching, has been reported in [8] and [9]. The bandpass filter-based topology incorporates the input impedance of the cascode amplifier as a part of the filter, and shows good performances while dissipating small amounts of dc power.

However, filter at the input mandates a number of the adoption of the reactive elements, which could lead to a larger chip area and NF degradation in the case of on-chip implementation, or the additional external components.

This paper proposes a new low power, low noise, and wideband amplifier combining a narrowband LNA with the conventional resistive shunt-feedback. The design principles and the measurement results of the implemented 3. In Fig. The represents the cutoff frequency of transistor. The quality factor of the series resonating input circuit shown in Fig. With a typical where LNA, the -factor shown in 1 is generally preferred to be high for high-gain and low-noise performance while dissipating low dc power.

Since the fractional 3-dB bandwidth of a typical series resonant circuit is inversely proportional to its -factor , the LNA shown in Fig. In is added as a shunt-feedback element to the conFig. The capacitor is used for the ac coupling purpose.

The source follower, composed of and , is added for measurement proposes only, and proand are ac coupling vides wideband output matching.

From Fig. In is limthe conventional resistive shunt-feedback, the size of ited as determines the input impedance. However, in the proposed topology, the input impedance is determined by. Therefore, in Fig. The -factor of the circuit shown in Fig. Then, the 3-dB bandwidth of the small-signal equivalent input circuit can be set by the proper. Depending on the amount of bandwidth, the selection of required value of can vary and so will the amount of noise.

As can be seen the amplifier without the feedback resistor in Fig. The feedback also provides its conventional roles of flattening the resistor gain over a wider bandwidth of frequencies with much smaller noise figure degradation.

With feedback resistor , the bandwidth extends to cover 3—5 GHz. The size of the cascode transistor is decided considering a trade-off between gain and 3-dB bandwidth.

The value of the on-chip spiral inductor is 2. Although is optimal from the simulation results due to the respectable noise is adjusted as 1 in order to performance, the value of guarantee wideband input matching. These inductors can be absorbed as a part of the package parasitics, but in this work they are implemented with bond wires due to the chip-on-board COB evaluation of the fabricated chip.

Other component pF, pF, and. As can be seen in Fig. The output return loss same frequency range due to the source follower output stage. This is caused by the increase in value of the peaking inductance due to the addition of external bonding wires to the supply voltage, which had not been counted properly during the simulation.

As can be seen from Fig. Considering the reverse isolation provided by the source follower stage, the amount of reverse isolation is worse than expected. The measured NF shows a minimum value of 2. The inductors L and L are implemented as external components. Compared to the simulation, the steep increase in NF near 5 GHz is caused by the lower power gain at these frequencies. The discrepancy in NF between the simulation and measurements at the 2—4-GHz range is the result of inaccuracies in the transistor noise model.

Table I summarizes the measurement results and compares them with previously reported works. In Table I, the indicated amount of power dissipation for this work represents the power dissipated in the cascode topology only. In the proposed topology, the wideband characteristics are obtained by utilizing the feedback resistor as a component to reduce the -factor of the narrowband amplifier input impedance.

The feedback resistor helps to extend the bandwidth of the amplifier as well as the gain flatness, while contributing a small amount in NF degradation. The adoption of the narrowband amplifier allows lower amounts of dc power dissipation. The proposed topology is applied for a 3. The measured results shows more than 9 dB of input return loss, a higher than 11 dB output return loss, a peak gain of 9.

The minimum NF is 2. The proposed LNA shows advantages in overall performance NF, power gain, power dissipation, chip size, number of external components, etc.

Ballweber, R. Gupta, and D. Solid-State Circuits, vol. Liu, K. Deng, and H. Bruccoleri, E. Klumperink, and B. Papers, vol. Andersson, C. Svensson, and O. New York: McGraw-Hill, Bevilacqua and A. Papers, , pp. Ismail and A. Nguyen et al. Microwave Theory Tech.

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Recent Advances in ASIC Development for Enhanced Performance M-Sequence UWB Systems

Email: cswu mail. The objective of this paper is to investigate a ultra-wideband UWB low noise amplifier LNA by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3 - 10 GHz microwave monolithic integrated circuit MMIC. Based on our experimental results, the low noise amplifier using the inductive-series peaking technique can obtain a wider bandwidth, low power consumption and high flatness of gain in the 3 - 10 GHz. This new standard system provides low cost, low complexity, low power consumption, high security, and high data-rate wireless communication capabilities, which can be widely adopted in wideband high-speed telecommunication system, Wireless Local Area Networks Wireless LANs , and Wireless Personal Area Networks Wireless PANs. Hence, the related wideband communication systems have increasingly been investigated in recent years. The low noise amplifier LNA plays a critical role in the front-end receiver communication, which needs to provide a excellent RF performance, such as a good input impedance matching, a low noise figure NF , and a flat power gain, etc [2].

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Year of fee payment : 4. Effective date : A low noise amplifier circuit including a front end voltage sensing and matching amplification circuit, a gain circuit and a combining circuit is disclosed. The front end voltage sensing and matching amplification circuit includes an input and two outputs and provides a matched signal at each output. The gain circuit includes two inputs, each input being respectively coupled to at least one of the two outputs of the front end voltage sensing and matching amplification circuit. The gain circuit further includes two outputs and an output signal is provided at each output of the gain circuit. The combining circuit combines the two output signals of the gain circuit.

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ultra wideband amplifier schematic

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The amplifier has got a novel feedback topology and load circuit that allows the designer to obtain a high voltage gain and matching in the wide frequency range from 3.

Optical amplifier


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US6670850B1 - Ultra-wideband constant gain CMOS amplifier - Google Patents

There have been some research on E band LNA at 90nm. My Question is basically why isn't this working? Designed in Maxim's advanced SiGe process, the device achieves a It has a significant impact on the noise performance of the Rx chain. S-parameter The circuit schematic will be generated automatically and placed in the schematic window right. We used prior experience with leaded parts to guess at University, Meanwhile,the low noise characteristic is achieved by noise canceling and capacitor cross-coupled.

Figure 2 shows the schematic used for the design.. I. INTRODUCTION. R F power amplifiers with the capability of covering several frequency bands could be used.

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Ultra-wideband UWB is a technology for transmitting information spread over a large bandwidth that should be able to share spectrum with other users. This is the main reason why UWB has attracted much attention from the wireless community, both from standardization bodies and chip manufacturers. The UWB frequency range is from 3. This circuit must have a precise amplification over a wide range of frequencies.

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A waveform-adaptive ultra-wideband UWB transmitter and noise-tracking UWB receiver for use in communications, object detection and radar applications. In one embodiment, the output of an oscillator is gated by a low-level impulse generator either directly or through an optional filter. In a special case of that embodiment wherein the oscillator is zero frequency and outputs a DC bias, a low-level impulse generator impulse-excites a bandpass filter to produce an UWB signal having an adjustable center frequency and desired bandwidth based on a characteristic of the filter. In another embodiment, the low-level impulse signal is approximated by a time-gated continuous-wave oscillator to produce an extremely wide bandwidth pulse with deterministic center frequency and bandwidth characteristics. The low-level impulse signal can be generated digitally. The UWB signal may be modulated to carry data, or may be used in object detection or ranging applications. The power amplifier may be gated to provide a power-efficient UWB transmitter.

The design revolves around precise calculations related to input impedance, output impedance, and the gain of the circuit. In addition, TSMC 0. The LNA is biased with two different voltage supplies in order to reduce power consumption. They can be categorized into two divergent classes according to the frequency at which they operate.




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