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Flexible Optical Amplifier for Visible-Light Communications Based on Organic–Inorganic Hybrids
GaN-based semiconductor optical amplifiers SOAs have the ability to boost the output power of laser diodes and thus are candidates for a broad variety of potential uses. Applications that utilize short wavelength, ultrafast pulses, including microprocessing, orthoptics, and next-generation optical storage can most benefit from GaN-based SOAs since current ultrafast pulse sources rely on large, expensive solid-state lasers.
GaN-based SOAs can generate high-energy, high peak power optical pulses when used in conjunction with mode-locked laser diodes. In this chapter, the basic characteristics of these devices are discussed, concentrating on pulse amplification. Early experimental work, as well as the latest results, is presented, and improvements in the SOA design allowing the generation of higher optical pulse energy are discussed.
Some Advanced Functionalities of Optical Amplifiers. Gallium nitride GaN -based optoelectronic devices have attracted significant research interest over the last two decades. An SOA is an important component of optical communication systems, and numerous reports regarding this type of device have been published since its invention in the s.
One of the main advantages of the SOA is its ability to be monolithically integrated with other devices. An SOA can be used as a pre-amplifier or a booster amplifier as well as in other functional devices, such as a wavelength converter or optical switch that utilizes its nonlinear nature [ 5 , 6 ].
An SOA can also be applied as a gain medium to produce short optical pulses in conjunction with a saturable absorber [ 7 ]. In high peak power applications, such as two photon bioimaging, an SOA can be used to boost the short optical pulses generated by a mode-locked laser diode MLLD [ 8 , 9 ].
High peak power and ultrashort optical pulses have a number of unique applications, many of which utilize the multiphoton processes that are discussed in detail in Section 4. The majority of pulse sources, however, consist of large, bulky solid-state lasers such as a mode-locked titanium sapphire Ti:Sap laser.
Moreover, to generate optical pulses at near-UV wavelengths, most of the available pulse sources require wavelength conversion, such that a second- or third-order harmonic of an IR pulse is required. This means that more sophisticated laser systems are necessary to obtain UV pulses. Fiber lasers are an alternative to solid-state lasers and have the advantage of a smaller footprint.
However, the requirements for wavelength conversion are the same since these devices can only generate photons in the IR wavelength. Such wavelength conversion systems have a number of disadvantages: a larger footprint, the need for precise alignment, less wall-plug efficiency, and increased complexity of the overall system, usually leading to higher costs and longer stabilizing times.
For all these reasons, the direct generation of UV pulses is highly desirable, and thus, a GaN-based SOA could be an important device with regard to obtaining short wavelength optical pulses.
As noted, GaN-based devices potentially can generate a very wide range of photons, from the deep UV to the red wavelength of the spectrum. Since then, many groups have explored GaN-based lasers with the aim of producing optical pulses. Earlier studies concentrated on self-pulsation for applications in optical storage systems since this approach can reduce the optical feedback noise [1-—14]. Several pulse generation techniques exist, including gain-switching [ 1 — 17 ], self-pulsating [ 18 - 20 ], mode-locking [ 7 , 17 , 21 ], and superradiance [ 22 ].
Kono et al. Kuramoto et al. SPLDs were also explored for applications in high peak power optical sources [ 18 , 20 , 23 ], and results included a peak power of 2.
Mode locking is another means of generating optical pulses and was first demonstrated by Gee and Bowers using a GaN-based SOA as the gain medium [ 7 ].
Saito also demonstrated an external cavity passive mode-locked laser diode MLLD , incorporating a bisectional waveguide structure with a 3-ps pulse duration and a 0. Oki et al. The reduction of the pulse duration is important for high peak power generation, and Kono et al. To further improve the peak power and pulse energy, the use of an SOA is essential. Our group has previously developed GaN-based SOAs meant to improve the pulse energy as well as the peak power. In , a peak power over W with a corresponding pulse energy of approximately pJ was demonstrated, employing an MLLD in conjunction with an SOA [ 28 ], and these values were later improved to approximately W and pJ [ 29 ].
Recently, an SOA incorporating a widely flared waveguide structure was developed, and the peak power and the pulse energy were further improved to 2. The pulse characteristics of published GaN-based devices are summarized in Figure 1 and Table 1 note that earlier studies of SPLDs were excluded from these summaries since pulse durations were not available.
It can be clearly seen that the use of an SOA significantly improves the peak power as well as the pulse energy.
Peak power vs. The size of each circle indicates the optical pulse energy. The use of an SOA effectively increases both the peak power and pulse energy. Note that in the case of those data points indicated by dashed circles, the pulse energies are multiplied by 10 for illustrative purposes. A Fabry—Perot SOA has nonzero facet reflectivity so that signal light is amplified as the result of many passes through the amplifier. In contrast, a travelling-wave SOA has negligible facet reflectivity such that the signal passes through only once single-pass.
A travelling-wave SOA is simpler to use, and so these devices are discussed exclusively in the present chapter. GaN-based SOAs that we would discuss throughout this chapter consist of a double quantum well structure with Ga 0. The layer structure is shown in Figure 2. In a travelling-wave SOA, it is important to minimize facet reflectivity, and this is illustrated in Figure 3. Both devices shown in this figure are ridge waveguide structures with a length of 1 mm and both incorporate facets with anti-reflection AR coatings.
As the result of nonzero reflectivity, the straight waveguide exhibits significant resonance and a multilongitudinal mode, both of which are undesirable with regard to SOA operation. The incorporation of the angled waveguide effectively reduces back reflection from the facets and thus suppresses the resonance effect.
Schematics of the layer structure of the SOAs discussed in the present chapter. Optical spectra obtained from 1 mm long SOAs with either a straight or b angled waveguides. Although both structures had AR-coated faces, the straight waveguide exhibits strong resonance due to residual reflections from an imperfect AR coating.
The output power of an SOA is limited by its saturation power, P sat , which is given by. Equation 1 indicates that a larger active region cross section, a lower confinement factor, a lower differential gain, and a reduced carrier lifetime are desirable for high power applications.
However, the output power is independent of device length. Equation 1 can be interpreted qualitatively, that is, the amount of energy that can be stored in the device is important for higher output from the SOA. The basic amplification characteristics of an SOA were assessed using device A shown in Figure 4 , incorporating a flared waveguide. The input and the output waveguide widths were 1. Schematics of device A.
The net gain values were estimated using an optical band-pass filter BPF to reject the out-of-band components of the amplified spontaneous emission ASE. It should be noted that the net gain values in this figure include the input and output coupling losses. It is evident that a gain of over 20 dB was obtained from a small signal input of less than 1 mW, a result that is comparable to the performance of SOAs fabricated with other materials [ 5 , 6 ].
Wavelength dependencies were characterized by tuning the input wavelength to , , or nm, and the corresponding spectra are presented in Figure 7 , in which very different spectra are observed at different input wavelengths.
At the shorter wavelength, the amplified spectrum shows that ASE is present, whereas less ASE is observed from amplification at longer wavelengths of and nm. Figure 8 a plots the output power and ASE spectra, while Figure 8 b presents the net gain spectra obtained at different input powers.
It is interesting to note that the gain peak shifts to longer wavelength as the input power is increased. At lower input power, the wavelength of the gain peak and the maximum output power are nearly equal to the ASE peak, while higher input power results in a red shift of these values.
This phenomenon can possibly be explained by considering that gain saturation due to carrier depletion leads to intra-band relaxation of the carriers. This results in more carriers available for longer wavelength amplification. In addition, GaN-based systems are known to have higher effective masses of electrons and holes [ 32 , 33 ], and this may also play a role in this mechanism.
Experimental setup for CW amplification. Optical spectra of the output of an angled SOA obtained with input wavelengths of a , b , and c nm. Spectra with red and without blue input are shown for each wavelength. Pulse amplification was initially studied using device A [ 31 ], employing a GaN-based external cavity MLLD developed by our group [ 26 ]. The resulting LD chip was composed of a forward bias gain section and a reverse bias saturable absorption SA section.
The facets had a high reflection coating on the SA side and an AR coating on the other side. More details regarding this MLLD are available in the literature [ 26 ]. From this figure, it is evident that significantly lower average power was obtained when applying pulse amplification. To investigate the limiting factors for pulse amplification, we acquired optical spectra as well as temporal characteristics using an optical spectrum analyzer OSA and a streak camera. The optical spectra of the amplified pulses exhibit a peak wavelength shift toward longer wavelengths as well as an oscillatory structure, representing self-phase modulation SPM [ 34 ].
High peak power optical pulses induce carrier depletion, which in turn varies the refractive index. The optical spectra also changes at the higher current density, such that a broad fifth peak appears near nm. Careful examination of this short wavelength peak using the streak camera indicated that it is a combination of ASE and pulse elements. The carrier recovery time was determined to be less than ps, and thus significantly faster than the pulse repetition of 1 ns. The duration of the amplified pulse was 3 ps and the peak power was estimated to be only 20 W.
Significant reduction of gain is observed for pulse amplification. At the higher current density, intense ASE is observed between pulses. Investigation of device A indicated that intense ASE appeared as the operating current density was increased. Intense ASE leads to gain depletion, preventing efficient amplification of optical pulses.
In this process, carrier depletion occurring via a stimulated emission process is induced by the intense ASE, which in turn results in fewer carriers available for pulse amplification. This generates the limited peak power of only 20 W.
The fact that intense ASE is a limiting factor for an SOA has also been noted in previous studies of other systems, both theoretically and experimentally [ 35 - 37 ]. To overcome this limitation, intense ASE has to be reduced. However, a trade-off exists since ASE is also needed for optical gain. We have thus pursued the development of SOAs by optimizing device structures so as to obtain low ASE while maintaining sufficient gain.
Peak powers were improved to approximately W and later to W by optimizing device structure such as the length and optical confinement factors [ 28 , 29 ]. The corresponding optical pulse energies were approximately and pJ.
Recently, further improvements gave a pulse energy of pJ corresponding to a peak power of W [ 30 ].
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GaN-based semiconductor optical amplifiers SOAs have the ability to boost the output power of laser diodes and thus are candidates for a broad variety of potential uses. Applications that utilize short wavelength, ultrafast pulses, including microprocessing, orthoptics, and next-generation optical storage can most benefit from GaN-based SOAs since current ultrafast pulse sources rely on large, expensive solid-state lasers. GaN-based SOAs can generate high-energy, high peak power optical pulses when used in conjunction with mode-locked laser diodes. In this chapter, the basic characteristics of these devices are discussed, concentrating on pulse amplification. Early experimental work, as well as the latest results, is presented, and improvements in the SOA design allowing the generation of higher optical pulse energy are discussed. Some Advanced Functionalities of Optical Amplifiers. Gallium nitride GaN -based optoelectronic devices have attracted significant research interest over the last two decades.
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Gallium Nitride-based Semiconductor Optical Amplifiers
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