A 300°C, SOI Transimpedance Amplifier with Application to Capacitive Temperature Sensing



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This video was recorded in 2012 and posted in 2021

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Title: A 300°C, SOI Transimpedance Amplifier with Application to Capacitive Temperature Sensing

Author: Lemi Toygur, Amita Patil, Jun Guo, Xinyu Yu, Steven Garverick

Abstract: This paper reports high-temperature wide-gain-bandwidth SOI-CMOS transimpedance (Rm) amplifier for application to MEMS-based impedance sensors. Amplifier fabricated using fully-depleted 0.5-¥ìm technology. Gain-bandwidth is 8-M¥Ø/1.2-MHz at room temperature, and above 2-M¥Ø/0.3-MHz up to 300-¨¬C. A novel temperature sensor constructed using MEMS-based capacitive strain-sensor, which was glued to 2-mil-thick stainless-steel (17-4-PH) base using high-temperature epoxy. The mismatch in coefficient of thermal expansion (CTE) between two materials generates displacement when temperature varied. FEA model predicted 1.12-fF/¨¬C, which was verified via Rm amplifier by stimulating 100 kHz sinusoid up to 250-¨¬C. Differential capacitance was +0.28-pF at room temperature, with temperature coefficient of ~-1 fF/¨¬C.

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